FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 174

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Zener Diodes (Continued)
MMBZ5247B
BZX84C18
MMBZ5248B
MMBZ5249B
BZX84C20
MMBZ5250B
BZX84C22
MMBZ5251B
BZX84C24
MMBZ5252B
MMBZ5253B
BZX84C27
MMBZ5254B
MMBZ5255B
BZX84C30
MMBZ5256B
BZX84C33
MMBZ5257B
Products
V
Z
Voltage (V)
Nominal Zener
17
18
18
19
20
20
22
22
24
24
25
27
27
28
30
30
33
33
Dissipation (W)
P
D
Total Device
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
2-169
Discrete Power Products –
Maximum Z
19
50
21
23
55
25
55
29
80
33
35
80
41
44
80
49
80
58
Z
(Ω)
Diodes and Rectifiers