FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 50
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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TO-220 (Continued)
FQP12P10
SFP9530
FQP8P10
SFP9520
FQP5P10
SFP9510
FQP47P06
FQP27P06
FQP17P06
SFP9Z34
FQP11P06
SFP9Z24
SFP2955
FQP7P06
SFP9Z14
NDP6020P
FDP4020P
Products
Min. (V)
BV
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-60
-20
-20
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.026
0.175
10V
0.29
0.53
1.05
0.07
0.12
0.14
0.28
0.41
0.3
0.6
1.2
0.3
0.5
–
–
R
4.5V
DS(ON)
0.05
0.08
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-45
0.075-10.07@2.7V
2.5V
0.11
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
9.5
21
30
12
16
84
33
21
30
13
15
15
25
9
9
= 5V
I
D
11.5
10.5
11.4
4.5
3.6
9.7
9.4
6.7
6.7
47
27
17
18
24
16
8
6
(A)
MOSFETs
P
D
37.5
160
120
66
49
32
82
49
45
60
75
65
40
79
53
49
38
(W)
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