FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 50

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-220 (Continued)
FQP12P10
SFP9530
FQP8P10
SFP9520
FQP5P10
SFP9510
FQP47P06
FQP27P06
FQP17P06
SFP9Z34
FQP11P06
SFP9Z24
SFP2955
FQP7P06
SFP9Z14
NDP6020P
FDP4020P
Products
Min. (V)
BV
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-60
-20
-20
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.026
0.175
10V
0.29
0.53
1.05
0.07
0.12
0.14
0.28
0.41
0.3
0.6
1.2
0.3
0.5
–
–
R
4.5V
DS(ON)
0.05
0.08
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-45
0.075-10.07@2.7V
2.5V
0.11
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
9.5
21
30
12
16
84
33
21
30
13
15
15
25
9
9
= 5V
I
D
11.5
10.5
11.4
4.5
3.6
9.7
9.4
6.7
6.7
47
27
17
18
24
16
8
6
(A)
MOSFETs
P
D
37.5
160
120
66
49
32
82
49
45
60
75
65
40
79
53
49
38
(W)