FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 85
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TO-252(DPAK) NPN Configuration
KSH112
MJD112
KSH122
MJD122
TO-252(DPAK) PNP Configuration
KSH117
MJD117
KSH127
MJD127
TO-3P NPN Configuration
TIP140
TIP142
KSC5047
TO-3P PNP Configuration
TIP146
TIP147
TO-3PF NPN Configuration
TIP142F
TO-3PF PNP Configuration
TIP147F
I
C
10
10
15
10
10
10
10
2
2
8
8
2
2
8
8
(A)
V
CEO
100
100
100
100
100
100
100
100
100
100
100
100
60
50
80
(V) V
CBO
100
100
100
100
100
100
100
100
100
100
100
100
100
60
80
(V) V
EBO
15
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
P
C
125
125
100
125
125
20
20
20
20
20
20
20
20
60
60
(W)
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Min
40
2-80
Discrete Power Products –
12000
12000
12000
12000
12000
12000
12000
12000
Max
–
–
–
–
–
–
–
h
FE
@I
C
2
2
4
4
2
2
4
4
5
5
5
5
5
5
5
(A) @V
CE
3
3
4
4
3
3
4
4
4
4
5
4
4
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
2
2
4
4
2
2
4
4
5
5
5
5
5
5
5
(A) @I
0.008
0.008
0.016
0.016
0.008
0.008
0.016
0.016
0.01
0.01
0.12
0.01
0.01
0.01
0.01
B
(A)
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