FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 85

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TO-252(DPAK) NPN Configuration
KSH112
MJD112
KSH122
MJD122
TO-252(DPAK) PNP Configuration
KSH117
MJD117
KSH127
MJD127
TO-3P NPN Configuration
TIP140
TIP142
KSC5047
TO-3P PNP Configuration
TIP146
TIP147
TO-3PF NPN Configuration
TIP142F
TO-3PF PNP Configuration
TIP147F
I
C
10
10
15
10
10
10
10
2
2
8
8
2
2
8
8
(A)
V
CEO
100
100
100
100
100
100
100
100
100
100
100
100
60
50
80
(V) V
CBO
100
100
100
100
100
100
100
100
100
100
100
100
100
60
80
(V) V
EBO
15
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
P
C
125
125
100
125
125
20
20
20
20
20
20
20
20
60
60
(W)
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Min
40
2-80
Discrete Power Products –
12000
12000
12000
12000
12000
12000
12000
12000
Max
–
–
–
–
–
–
–
h
FE
@I
C
2
2
4
4
2
2
4
4
5
5
5
5
5
5
5
(A) @V
CE
3
3
4
4
3
3
4
4
4
4
5
4
4
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
2
2
4
4
2
2
4
4
5
5
5
5
5
5
5
(A) @I
0.008
0.008
0.016
0.016
0.008
0.008
0.016
0.016
0.01
0.01
0.12
0.01
0.01
0.01
0.01
B
(A)