FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 124

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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JFETs (Continued)
2N5458
2N3819
MPF102
2N5459
J108
PN5432
J105
BF246B
BF247A
PF5301-2
J305
2N5953
PN4393
2N5952
PN4302
2N5246
PN4861
TIS75
2N5951
PN4392
PN4303
2N5245
J304
PN4416
2N5950
TIS74
BF256A
BF256B
BF256C
BF244A
BF245A
BF244B
BF245B
2N5247
Products
BV
(V)
25
25
25
25
25
25
25
25
25
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
GDS
Dissipation
Power
(mW)
625
350
350
625
625
350
625
625
625
350
625
350
625
350
625
350
350
625
625
350
350
350
350
350
350
350
350
350
350
350
350
350
P
–
–
D
Min (V)
4.5
0.6
0.6
1.7
0.5
0.8
0.5
1.3
0.5
0.8
0.8
2.5
2.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
–
–
–
–
1
2
3
4
2
2
1
2
2
1
Typ (V) Max (V) @ I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
14.5
14.5
GS
3.5
7.5
7.5
7.5
10
10
10
7
8
8
8
3
3
3
3
4
4
4
4
5
5
6
6
6
6
6
6
8
8
8
8
8
(off)
0.002
0.002
0.003
0.001
0.001
0.001
0.001
0.004
0.001
0.001
0.001
0.004
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.1
0.1
0.1
0.1
0.2
0.2
0.2
D
1
(µA) @ V
2-119
Discrete Power Products –
15
15
15
15
15
15
15
10
15
15
20
15
20
15
15
20
15
20
20
15
15
15
15
15
15
15
15
15
15
15
15
15
DS
5
5
(V) Min (mA) Max (mA) @V
0.03
150
500
0.5
2.5
1.5
80
60
60
25
10
20
11
2
2
2
4
1
5
4
8
8
7
4
5
5
5
3
6
2
2
6
6
8
140
140
100
6.5
I
0.5
6.5
20
20
16
30
80
80
13
75
10
15
15
15
15
13
18
15
15
24
DSS
9
–
–
–
8
5
8
5
7
7
15
15
15
15
15
15
15
15
15
10
15
15
20
15
20
15
15
15
15
20
20
15
15
15
15
15
15
15
15
15
15
15
15
15
DS
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
1.5
4.5
4.5
4.5
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2
2
8
8
2
1
2
3
3
GFS
5.5
7.5
6.5
6.5
0.3
6.5
11
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
(Ω)
100
60
60
60
40
–
–
–
–
8
5
3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0002
0.0001
0.0003
0.0001
D
0.003
0.002
0.002
(µA)
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–