FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 129

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Rectifiers – General Purpose Rectifiers (Continued)
GF1B
S1B
GF1D
S1D
GF1G
S1G
GF1J
S1J
GF1K
S1K
GF1M
S1M
SMB
S2A
S2B
S2D
S2G
S2J
S2K
S2M
SMC
S3A
S3B
S3D
S3G
S3J
S3K
S3M
Products
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
RRM
1000
1000
1000
1000
100
100
200
200
400
400
600
600
800
800
100
200
400
600
800
100
200
400
600
800
50
50
(V)
I
F (AV)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1
1
1
1
1
1
1
1
1
1
1
1
3
3
3
3
3
3
3
(A)
2-124
I
FSM
100
100
100
100
100
100
100
30
40
30
40
30
40
30
40
30
40
30
40
50
50
50
50
50
50
50
(A)
Discrete Power Products –
V
FM
1.15
1.15
1.15
1.15
1.15
1.15
1.15
Max (V)
1.1
1.1
1.1
1.1
1.2
1.1
1.2
1.1
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1
1
1
1
t
rr
Max (ns)
2000
1800
2000
1800
2000
1800
2000
1800
2000
1800
2000
1800
2000
2000
2000
2000
2000
2000
2000
2500
2500
2500
2500
2500
2500
2500
Diodes and Rectifiers
I
RM
or I
R
5
1
5
1
5
1
5
1
5
1
5
1
1
1
1
1
1
1
1
5
5
5
5
5
5
5
Max (µA)