FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 86

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Bipolar Power Transistors – Dynamic Focus Transistors
TO-126 NPN Configuration
KSC5042M
TO-220F NPN Configuration
KSC5042F
Products
V
CBO
1500
1500
(V) V
CEO
900
900
(V) V
EBO
5
5
(V) I
C
0.1
0.1
(A)
P
C
(W)
4
6
Min
30
30
2-81
Discrete Power Products –
Max
–
–
h
FE
@I
0.01
0.01
C
(A) @V
CE
5
5
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
–
–
5
5
V
CE
(sat)
0.02
0.02
C
(A) @I
0.004
0.004
B
(A)
Datash
DS9008
DS9008
17.pdf
16.pdf
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