FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 86
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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Bipolar Power Transistors – Dynamic Focus Transistors
TO-126 NPN Configuration
KSC5042M
TO-220F NPN Configuration
KSC5042F
Products
V
CBO
1500
1500
(V) V
CEO
900
900
(V) V
EBO
5
5
(V) I
C
0.1
0.1
(A)
P
C
(W)
4
6
Min
30
30
2-81
Discrete Power Products –
Max
–
–
h
FE
@I
0.01
0.01
C
(A) @V
CE
5
5
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
–
–
5
5
V
CE
(sat)
0.02
0.02
C
(A) @I
0.004
0.004
B
(A)
Datash
DS9008
DS9008
17.pdf
16.pdf
eet
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