s908qc16vdse Freescale Semiconductor, Inc, s908qc16vdse Datasheet - Page 37

• Manufacturer Part Number: s908qc16vdse
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

PGM — Program Control Bit
2.6.2 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 48-byte user interrupt vectors area also
forms a page. Any FLASH memory page can be erased alone.
Freescale Semiconductor
10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the block to be erased.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, other unrelated operations may
occur between the steps.
A page erase of the vector page will erase the internal oscillator trim value
at $FFC0.
RCV
MC68HC908QC16 • MC68HC908QC8 • MC68HC908QC4 Data Sheet, Rev. 4
, the memory can be accessed in read mode again.
NVS
Erase
NVH
.
.
.
NOTE
NOTE
FLASH Memory (FLASH)
37