mt47h128m16hg-3-it Micron Semiconductor Products, mt47h128m16hg-3-it Datasheet - Page 12

• Manufacturer Part Number: mt47h128m16hg-3-it
• Description: 2gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Table 3:
PDF: 09005aef824f87b6/Source: 09005aef824f1182
2gb_ddr2.fm - Rev. A 9/06 EN
A9, C1, C3, C7,
H1, H9, F1, F9,
A3, E3, J3, N1,
D8, E7, F2, F8,
G8, G2, H7,
D3, D1, D9,
C8, C2, D7,
A7, B2, B8,
C9, E9, G1,
A1, E1, J9,
Number
x16 Ball
M9, R1
G7, G9
H2, H8
A2, E2
A8, E8
B1, B9
H3,
G3,
D2,
A8
B7
F7
E8
P9
J1
J2
J7
–
–
–
–
84-/60-Ball Descriptions
A9, C1, C3, C7,
C8, C2, D7, D3
A1, E9, H9, L1
J3, E3, A3, K9
x4, x8 Ball
D3, D1, D9,
C8, C2, D7,
A7, B2, B8,
Number
D2, D8
B7, A8
B3, A2
B1, B9
E1
C9
E2
E7
–
–
–
–
–
DQ8–DQ10,
DQS, DQS#
DQ0–DQ3,
DQ4–DQ7,
DQ0–DQ3
DQ4–DQ7
DQ0–DQ2
Symbol
UDQS#
DQ11–
DQ14–
LDQS#
RDQS#
UDQS,
DQ13,
RDQS,
LDQS,
V
DQ15
V
V
V
DQ3
V
V
V
NU
DD
SS
NC
DD
SS
REF
DD
SS
DL
Q
Q
L
(Continued)
Supply Power supply: 1.8V ±0.1V.
Supply DLL power supply: 1.8V ±0.1V.
Supply DQ power supply: 1.8V ±0.1V. Isolated on the device for improved
Supply SSTL_18 reference voltage.
Supply Ground.
Supply DLL ground. Isolated on the device from V
Supply DQ ground. Isolated on the device for improved noise immunity.
Outpu
Type
I/O
I/O
I/O
I/O
I/O
I/O
–
–
t
Description
Data input/output: Bidirectional data bus for x16.
Data input/output: Bidirectional data bus for x8.
Data input/output: Bidirectional data bus for x4.
Data strobe for upper byte: Output with read data, input with
write data for source synchronous operation. Edge-aligned with
read data, center-aligned with write data. UDQS# is only used when
differential data strobe mode is enabled via the LOAD MODE
command.
Data strobe for lower byte: Output with read data, input with
write data for source synchronous operation. Edge-aligned with
read data, center-aligned with write data. LDQS# is only used when
differential data strobe mode is enabled via the LOAD MODE
command.
Data strobe: Output with read data, input with write data for
source synchronous operation. Edge-aligned with read data, center-
aligned with write data. DQS# is only used when differential data
strobe mode is enabled via the LOAD MODE command.
Redundant data strobe for x8 only. RDQS is enabled/disabled via
the LOAD MODE command to the extended mode register (EMR).
When RDQS is enabled, RDQS is output with read data only and is
ignored during write data. When RDQS is disabled, ball F3 becomes
data mask (see DM ball). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
noise immunity.
No connect: These balls should be left unconnected.
Not used: Not used only on x16. If EMR[E10] = 0, A8 and E8 are
UDQS# and LDQS#. If EMR[E10] = 1, then A8 and E8 are not used.
12
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Ball Assignment and Description
2Gb: x4, x8, x16 DDR2 SDRAM
©2006 Micron Technology, Inc. All rights reserved.
SS
and V
SS
Q.