mt47h128m16hg-3-it Micron Semiconductor Products, mt47h128m16hg-3-it Datasheet - Page 40

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mt47h128m16hg-3-it

Manufacturer Part Number
mt47h128m16hg-3-it
Description
2gb X4, X8, X16 Ddr2 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
Figure 21:
PDF: 09005aef824f87b6/Source: 09005aef824f1182
2gb_ddr2.fm - Rev. A 9/06 EN
Consecutive READ Bursts
Notes:
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
Nonconsecutive read data is illustrated in Figure 22 on page 41. Full-speed random read
accesses within a page (or pages) can be performed. DDR2 SDRAM supports the use of
concurrent auto precharge timing, shown in Table 9 on page 42.
DDR2 SDRAM does not allow interrupting or truncating of any READ burst using BL = 4
operations. Once the BL = 4 READ command is registered, it must be allowed to
complete the entire READ burst. However, a READ (with auto precharge disabled) using
BL = 8 operation may be interrupted and truncated only by another READ burst as long
as the interruption occurs on a 4-bit boundary due to the 4n prefetch architecture of
DDR2 SDRAM. READ burst BL = 8 operations may not be interrupted or truncated with
any command except another READ command, as shown in Figure 23 on page 41.
COMMAND
COMMAND
COMMAND
DQS, DQS#
DQS, DQS#
ADDRESS
ADDRESS
ADDRESS
CK#
CK#
DQ
DQ
CK
CK
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
t
t
RL = 3
t
CCD
CCD
AC,
NOP
NOP
T1
T1
RL = 4
t
DQSCK, and
40
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
T2n
T3
NOP
T3
NOP
2Gb: x4, x8, x16 DDR2 SDRAM
DON’T CARE
DO
n
T3n
T3n
T4
T4
NOP
NOP
DO
n
TRANSITIONING DATA
T4n
T4n
©2006 Micron Technology, Inc. All rights reserved.
READ Command
T5
T5
NOP
NOP
DO
b
T5n
T5n
T6
T6
NOP
NOP
DO
b
T6n
T6n

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