mt47h128m16hg-3-it Micron Semiconductor Products, mt47h128m16hg-3-it Datasheet - Page 44

• Manufacturer Part Number: mt47h128m16hg-3-it
• Description: 2gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 27:
PDF: 09005aef824f87b6/Source: 09005aef824f1182
2gb_ddr2.fm - Rev. A 9/06 EN
COMMAND 5
BA0, BA1, BA2
ADDRESS 5
DQS, DQS#
DQS, DQS#
Case 1: t AC (MIN) and t DQSCK (MIN)
Case 2: t AC (MAX) and t DQSCK (MAX)
A10 5
DQ 1
DQ 1
CK#
CKE
DM
CK
NOP 6
Bank Read – without Auto Precharge
T0
Notes:
Bank x
ACT
RA
RA
T1
1. DO n = data-out from column n; subsequent elements are applied in the programmed
2. BL = 4 and AL = 0 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T5.
5. PRE = PRECHARGE, ACT = ACTIVE, RA = row address, BA = bank address.
6. NOP commands are shown for ease of illustration; other commands may be valid at these
7. The PRECHARGE command can only be applied at T6 if
8. READ-to-PRECHARGE = AL + BL/2 + (
9. I/O balls, when entering or exiting HIGH-Z, are not referenced to a specific voltage level,
t CK
order.
times.
but to when the device begins to drive or no longer drives, respectively.
t RAS 7
t RCD
t RC
NOP 6
T2
t CH
t CL
NOP 6
T3
Bank x
READ 2
3
Col n
T4
44
CL = 3
t
RTP - 2 clocks).
t RTP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP 6
T5
8
t LZ (MAX)
t LZ (MIN)
ALL BANKS
ONE BANK
2Gb: x4, x8, x16 DDR2 SDRAM
Bank x 4
9
PRE 7
T6
9
t RPRE
t LZ (MIN)
t LZ (MIN)
t
RAS (MIN) is met.
DON’T CARE
t RPRE
NOP 6
T7
t DQSCK (MIN)
©2006 Micron Technology, Inc. All rights reserved.
t RP
DO
t DQSCK (MAX)
n
t AC (MIN)
t AC (MAX)
DO
n
T7n
READ Command
NOP 6
T8
TRANSITIONING DATA
t HZ (MIN)
t HZ (MAX)
T8n
t RPST
t RPST
Bank x
ACT
9
RA
RA
9