mt47h128m16hg-3-it Micron Semiconductor Products, mt47h128m16hg-3-it Datasheet - Page 82

• Manufacturer Part Number: mt47h128m16hg-3-it
• Description: 2gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Absolute Maximum Ratings
Table 18:
Temperature and Thermal Impedance
PDF: 09005aef824f87b6/Source: 09005aef824f1182
2gb_ddr2.fm - Rev. A 9/06 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; any input 0V ≤ V
not under test = 0V)
Output leakage current; 0V ≤ V
disabled
V
DD
DD
DD
REF
Q supply voltage relative to V
L supply voltage relative to V
supply voltage relative to V
leakage current; V
Absolute Maximum DC Ratings
Notes:
REF
= Valid V
Stresses greater than those listed in Table 18 may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 19 on page 83, be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in main-
taining the proper junction temperature is using the device’s thermal impedances
correctly. The thermal impedances are listed in Table 20 on page 83 for the applicable
and available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances
listed below. For designs that are expected to last several years and require the flexibility
to use several designs, consider using final target theta values, rather than existing
values, to account for larger thermal impedances.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
temperature is too high, use of forced air and/or heat sinks may be required in order to
satisfy the case temperature specifications.
OUT
SS
SS
DD
REF
SS
CASE
SS
, V
L
≤ V
Q
REF
≤ 0.6 x V
DD
DD
(T
level
IN
Q, and V
Q; DQ and ODT
C
≤ V
) specification is not exceeded. In applications where the device’s ambient
DD
DD
Q; however, V
; all other balls
DD
L must be within 300mV of each other at all times.
82
REF
may be ≥ V
V
Symbol
IN
V
V
V
I
DD
, V
I
V
DD
OZ
DD
I
REF
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUT
Q
L
DD
Q provided that V
2Gb: x4, x8, x16 DDR2 SDRAM
Min
–1.0
–0.5
–0.5
–0.5
DD
–5
–5
–2
Q.
Absolute Maximum Ratings
Max
2.3
2.3
2.3
2.3
5
5
2
©2006 Micron Technology, Inc. All rights reserved.
REF
≤ 300mV.
Units
µA
µA
µA
V
V
V
V
Notes
1, 2
1
1
3