mt47h128m16hg-3-it Micron Semiconductor Products, mt47h128m16hg-3-it Datasheet - Page 68

• Manufacturer Part Number: mt47h128m16hg-3-it
• Description: 2gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 50:
Figure 51:
PDF: 09005aef824f87b6/Source: 09005aef824f1182
2gb_ddr2.fm - Rev. A 9/06 EN
COMMAND
COMMAND
DQS, DQS#
DQS, DQS#
ADDRESS
ADDRESS
CKE
CKE
CK#
A10
CK#
A10
DQ
DQ
CK
CK
WRITE
VALID
VALID
WRITE
TRANSITIONING DATA
T0
T0
WRITE to Power-Down or Self-Refresh Entry
WRITE with Auto Precharge to Power-Down or Self Refresh Entry
Notes:
Notes:
NOP
NOP
T1
T1
WL = 3
WL = 3
1. Power-down or self refresh entry may occur after the WRITE burst completes.
1. WR is programmed through MR[9, 10, 11] and represents (
2. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may occur
to next integer
1 x
t
CK later at Ta1, prior to
DON’T CARE
NOP
NOP
T2
T2
t
CK.
D
D
NOP
NOP
T3
T3
OUT
OUT
Indicates a break in
time scale
D
D
OUT
OUT
t
68
VALID
D
RP being satisfied.
VALID
D
T4
OUT
T4
OUT
D
D
OUT
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TRANSITIONING DATA
VALID
VALID
T5
T5
WR 1
2Gb: x4, x8, x16 DDR2 SDRAM
VALID 2
VALID
t WTR
Ta0
T6
t
WR [MIN] ns /
or self refresh
or self refresh
Power-down
Power-down
©2006 Micron Technology, Inc. All rights reserved.
Power-Down Mode
entry 1
entry
NOP
NOP 1
Ta1
T7
t
CK) rounded up
t CKE (MIN)
t CKE (MIN)
Ta2
DON’T CARE
T8