HYB18T512160BF-2.5 Qimonda, HYB18T512160BF-2.5 Datasheet - Page 31

• Manufacturer Part Number: HYB18T512160BF-2.5
• Description: IC DDR2 SDRAM 512MBIT 84TFBGA
• Manufacturer: Qimonda

Specifications of HYB18T512160BF-2.5

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 84-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1016-2

5.6
This chapter contains Overshoot and Undershoot Specification.
Rev. 1.2, 2007-11
03292006-YBYM-WG0Z
Parameter
Maximum peak amplitude allowed for
overshoot area
Maximum peak amplitude allowed for
undershoot area
Maximum overshoot area above
Maximum undershoot area below
Overshoot and Undershoot Specification
V
V
DD
SS
AC Overshoot / Undershoot Specification for Address and Control Pins
DDR2-400
0.9
0.9
1.33
1.33
AC Overshoot / Undershoot Diagram for Address and Control Pins
31
DDR2-533
0.9
0.9
1.00
1.00
512-Mbit Double-Data-Rate-Two SDRAM
DDR2-667
0.9
0.9
0.8
0.8
HYB18T512[40/80/16]0BF
DDR2-800
0.9
0.9
0.66
0.66
Internet Data Sheet
TABLE 30
FIGURE 6
Unit
V
V
V-ns
V-ns