HYB18T512160BF-2.5 Qimonda, HYB18T512160BF-2.5 Datasheet - Page 53

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HYB18T512160BF-2.5

Manufacturer Part Number
HYB18T512160BF-2.5
Description
IC DDR2 SDRAM 512MBIT 84TFBGA
Manufacturer
Qimonda
Datasheet

Specifications of HYB18T512160BF-2.5

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
400MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 95°C
Package / Case
84-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1016-2
9
For reference the Qimonda SDRAM component nomenclature is enclosed in this chapter.
Rev. 1.2, 2007-11
03292006-YBYM-WG0Z
Example for
DDR2 DRAM
Field Description
1
2
3
4
5
6
7
8
9
Qimonda Component Prefix
Interface Voltage [V]
DRAM Technology
Component Density [Mbit]
Number of I/Os
Product Variations
Die Revision
Package,
Lead-Free Status
Power
Product Nomenclature
Field Number
1
HYB
2
18
3
T
Values
HYB
HYI
18
15
T
32
64
128
256
512
1G
2G
4G
40
80
16
32
0 .. 9
A ( 0...9 ) First
B ( 0...9 ) Second
C ( 0...9 ) Third
C
F
L
4
256
SSTL_18, + 1.8 V (± 0.1 V)
look up table
Coding
Memory components
Memory components, industrial temperature range (-40°C – +85 °C)
SSTL_15, + 1.5 V (± 0.1 V)
DDR2
32 Mbit
64 Mbit
128 Mbit
256 Mbit
512 Mbit
1 Gbit
2 Gbit
4 Gbit
× 4
× 8
× 16
× 32
FBGA, lead-containing
FBGA, lead-free
Standard power product
Low power product
53
5
16
6
0
512-Mbit Double-Data-Rate-Two SDRAM
Examples for Nomenclature Fields
7
A
DDR2 Memory Components
8
C
HYB18T512[40/80/16]0BF
Internet Data Sheet
9
TABLE 44
TABLE 45
10
–3.7

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