HYB18T512160BF-2.5 Qimonda, HYB18T512160BF-2.5 Datasheet - Page 8

• Manufacturer Part Number: HYB18T512160BF-2.5
• Description: IC DDR2 SDRAM 512MBIT 84TFBGA
• Manufacturer: Qimonda

Specifications of HYB18T512160BF-2.5

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 84-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1016-2

Rev. 1.2, 2007-11
03292006-YBYM-WG0Z
Abbreviation
I
O
I/O
AI
PWR
GND
NC
Abbreviation
SSTL
LV-CMOS
CMOS
OD
Description
Standard input-only ball. Digital levels
Output. Digital levels
I/O is a bidirectional input/output signal
Input. Analog levels
Power
Ground
Not Connected
Description
Serial Stub Terminated Logic (SSTL_18)
Low Voltage CMOS
CMOS Levels
Open Drain. The corresponding ball has 2 operational states, active low and tristate, and
allows multiple devices to share as a wire-OR.
8
512-Mbit Double-Data-Rate-Two SDRAM
Abbreviations for Buffer Type
Abbreviations for Ball Type
HYB18T512[40/80/16]0BF
Internet Data Sheet
TABLE 4
TABLE 5