DSPIC30F3013-30I/SO Microchip Technology, DSPIC30F3013-30I/SO Datasheet - Page 193

• Manufacturer Part Number: DSPIC30F3013-30I/SO
• Description: IC DSPIC MCU/DSP 24K 28SOIC
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F3013-30I/SO

• Program Memory Type: FLASH
• Program Memory Size: 24KB (8K x 24)
• Package / Case: 28-SOIC (7.5mm Width)
• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 20
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Product: DSCs
• Data Bus Width: 16 bit
• Processor Series: DSPIC30F
• Core: dsPIC
• Maximum Clock Frequency: 30 MHz
• Number Of Programmable I/os: 30
• Data Ram Size: 2 KB
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52713-733, 52714-737, 53276-922, EWDSPIC
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE4000, DM240002, DM300018, DM330011
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MILDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DSPIC30F301330ISO

TABLE 24-9:
TABLE 24-10: DC CHARACTERISTICS: PROGRAM AND EEPROM
 2004 Microchip Technology Inc.
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D136
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
E
V
T
T
I
E
V
V
V
T
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
00 values not in usable operating range.
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
DEW
RETD
EB
PEW
RETD
D
DRW
P
PR
PEW
V
V
Symbol
BOR
BHYS
ELECTRICAL CHARACTERISTICS: BOR
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program FLASH Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
ICSP Block Erase Time
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage
V
low
During Programming
During Programming
During Programming
for Read/Write
for Read
for Block Erase
for Erase/Write
DD
Characteristic
transition high to
Characteristic
(2)
on
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 00
BORV = 01
BORV = 10
BORV = 11
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
Preliminary
V
V
10K
Min
3.0
3.0
40
40
—
—
—
—
—
—
MIN
MIN
Typ
100K
(3)
100
100
1M
10
10
10
—
—
—
—
2
2
4
(1)
Min
2.7
4.2
4.5
—
—
Max
5.5
5.5
5.5
5.5
—
—
—
30
—
—
—
—
30
30
Typ
-40°C ≤ T
-40°C ≤ T
—
—
—
—
5
-40°C ≤ T
-40°C ≤ T
Units
(1)
Year Provided no other specifications
Year Provided no other specifications
E/W
E/W
mA
mA
mA
ms
ms
ms
V
V
V
V
Max
2.86
4.46
4.78
A
A
—
—
-40°C ≤ T
Using EECON to read/write
V
voltage
are violated
Row Erase
-40°C ≤ T
V
voltage
are violated
Row Erase
Bulk Erase
≤ +85°C for Industrial
≤ +125°C for Extended
MIN
MIN
A
A
≤ +85°C for Industrial
≤ +125°C for Extended
= Minimum operating
= Minimum operating
Units
mV
V
V
V
V
dsPIC30F
A
A
Conditions
≤ +85°C
≤ +85°C
Not in operating
range
DS70082G-page 191
Conditions