MC9RS08KA2CSCR Freescale Semiconductor, MC9RS08KA2CSCR Datasheet - Page 111

• Manufacturer Part Number: MC9RS08KA2CSCR
• Description: IC MCU 8BIT 2K FLASH 8-SOIC
• Manufacturer: Freescale Semiconductor
• Series: RS08r

Specifications of MC9RS08KA2CSCR

• Core Processor: RS08
• Core Size: 8-Bit
• Speed: 10MHz
• Peripherals: LVD, POR, WDT
• Number Of I /o: 4
• Program Memory Size: 2KB (2K x 8)
• Program Memory Type: FLASH
• Ram Size: 63 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Processor Series: RS08KA
• Core: RS08
• Data Bus Width: 8 bit
• Data Ram Size: 63 B
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 4
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: DEMO9RS08KA8, DEMO9RS08KA2
• Minimum Operating Temperature: - 40 C
• For Use With: DEMO9RS08KA2 - DEMO BOARD FOR 9RS08KA2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

Solving
where K is a constant pertaining to the particular part. K can be determined from
measuring P
obtained by solving equations 1 and 2 iteratively for any value of T
A.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
A.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Freescale Semiconductor
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to V
Low-voltage Detection threshold
Power on RESET (POR) voltage
Input high voltage (V
Input high voltage (1.8 V ≤ V
MM circuit description
HBM circuit description
0 < f
Bus
Equation A-1
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
<10MHz
D
(at equilibrium) for a known T
DD
Parameter
> 2.3V) (all digital inputs)
Parameter
and
DD
Equation A-2
≤ 2.3 V) (all digital inputs)
(Temperature Range = –40 to 85°C Ambient)
K = P
Table A-3. ESD Protection Characteristics
(V
(V
DD
DD
MC9RS08KA2 Series Data Sheet, Rev. 4
D
falling)
rising)
P
Table A-4. DC Characteristics
× (T
D
for K gives:
= K ÷ (T
A
DD
+ 273°C) + θ
A
. Using this value of K, the values of P
J
+ 273°C)
Symbol
V
V
V
V
V
V
RAM
POR
Symbol
LVD
V
DD
V
IH
IH
JA
THHBM
THMM
× (P
D
0.70 × V
0.85 × V
)
2
0.8
1.80
1.88
Min
1.8
0.9
A
.
1
DD
DD
Appendix A Electrical Characteristics
Typical
Value
2000
1.86
1.94
200
1.4
—
—
—
—
Equation A-3
D
and T
Max
1.95
2.03
5.5
1.7
—
—
—
J
can be
by
Eqn. A-2
Eqn. A-3
Unit
Unit
V
V
V
V
V
V
V
V
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