MC9RS08KA2CSCR Freescale Semiconductor, MC9RS08KA2CSCR Datasheet - Page 120

• Manufacturer Part Number: MC9RS08KA2CSCR
• Description: IC MCU 8BIT 2K FLASH 8-SOIC
• Manufacturer: Freescale Semiconductor
• Series: RS08r

Specifications of MC9RS08KA2CSCR

• Core Processor: RS08
• Core Size: 8-Bit
• Speed: 10MHz
• Peripherals: LVD, POR, WDT
• Number Of I /o: 4
• Program Memory Size: 2KB (2K x 8)
• Program Memory Type: FLASH
• Ram Size: 63 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Processor Series: RS08KA
• Core: RS08
• Data Bus Width: 8 bit
• Data Ram Size: 63 B
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 4
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: DEMO9RS08KA8, DEMO9RS08KA2
• Minimum Operating Temperature: - 40 C
• For Use With: DEMO9RS08KA2 - DEMO BOARD FOR 9RS08KA2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

Appendix A Electrical Characteristics
120
1
2
3
Supply voltage for program/erase
Program/Erase voltage
V
Supply voltage for read operation
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
Data retention
Typicals are measured at 25°C.
t
be programmed more than twice before next erase.
Fast V
into the pad and cause permanent damage to the pad. External filtering for the V
recommended. An example VPP filter is shown in
PP
PP
PP
hv
Program
Mass erase
0 < f
T
L
is the cumulative high voltage programming time to the same row before next erase. Same address can not
current
to PGM/MASS setup time
rise time
to T
Bus
PP
me
H
< 10 MHz
rise time may potentially trigger the ESD protection structure, which may result in over current flowing
PP
= –40°C to + 85°C
& t
3
Characteristic
hold time
hv
applied to device)
2
MC9RS08KA2 Series Data Sheet, Rev. 4
Table A-9. FLASH Characteristics
I
I
VPP_erase
Symbol
VPP_prog
t
V
hv_total
t
t
t
V
V
D_ret
t
t
t
nvh1
t
t
prog
t
t
t
Read
t
pgs
nvs
nvh
vps
vph
—
me
vrs
rcv
hv
DD
PP
Figure
A-3.
1000
11.8
Min
500
100
200
2.7
1.8
20
10
20
20
15
—
—
—
—
5
5
1
Typical
100
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
PP
power source is
Max
12.2
200
100
5.5
5.5
40
—
—
—
—
—
—
—
—
—
—
—
8
2
Freescale Semiconductor
cycles
hours
years
Unit
μA
μA
ms
ms
μs
μs
μs
μs
μs
ns
ns
ns
μs
V
V
V