MC68HC908BD48IFB Freescale Semiconductor, MC68HC908BD48IFB Datasheet - Page 281

• Manufacturer Part Number: MC68HC908BD48IFB
• Description: IC MCU 48K FLASH 6MHZ USB 44PQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908BD48IFB

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 6MHz
• Connectivity: I²C, USB
• Peripherals: POR, PWM
• Number Of I /o: 32
• Program Memory Size: 48KB (48K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 6x8b
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 44-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

21.15 Memory Characteristics
MC68HC908BD48
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
Notes:
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
the FLASH memory.
the FLASH memory.
pump, by clearing HVEN to logic 0.
t
least this many erase / program cycles.
least this many erase / program cycles.
time specified.
Read
HV
rcv
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge
must satisfy this condition: t
is defined as the frequency range for which the FLASH memory can be read.
—
Rev. 2.1
Characteristic
(8)
(6)
nvs
(7)
+ t
MErase
nvh
Erase
Electrical Specifications
+ t
(Min), there is no erase-disturb, but it reduces the endurance of
pgs
(Min), there is no erase-disturb, but it reduces the endurance of
+ (t
PROG
t
Symbol
MErase
t
f
Erase
Read
t
V
t
t
×
PROG
t
rcv
HV
t
t
t
nvhl
RDR
—
nvs
nvh
pgs
—
—
—
64) ≤ t
(4)
(5)
(1)
(2)
(3)
HV
max.
Min
32k
10k
10k
100
10
20
10
—
2
1
2
4
5
5
1
8.4M
Max
—
—
—
—
—
—
—
40
—
—
—
—
—
4
Electrical Specifications
Cycles
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
V
Data Sheet
281