MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 123

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MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

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Input Clock Frequency Change
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
When the DDR3 SDRAM is initialized, it requires the clock to be stable during most nor-
mal states of operation. This means that after the clock frequency has been set to the
stable state, the clock period is not allowed to deviate except what is allowed for by the
clock jitter and spread spectrum clocking (SSC) specifications.
The input clock frequency can be changed from one stable clock rate to another under
two conditions: self refresh mode and precharge power-down mode. Outside of these
two modes, it is illegal to change the clock frequency. For the self refresh mode condi-
tion, when the DDR3 SDRAM has been successfully placed into self refresh mode and
t
clock becomes a “Don’t Care,” changing the clock frequency is permissible, provided
the new clock frequency is stable prior to
fresh mode for the sole purpose of changing the clock frequency, the self refresh entry
and exit specifications must still be met.
The precharge power-down mode condition is when the DDR3 SDRAM is in precharge
power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a
logic LOW or R
R
and CKE must be at a logic LOW. A minimum of
LOW before the clock frequency can change. The DDR3 SDRAM input clock frequency
is allowed to change only within the minimum and maximum operating frequency speci-
fied for the particular speed grade (
clock frequency change, CKE must be held at a stable LOW level. When the input clock
frequency is changed, a stable clock must be provided to the DRAM
charge power-down may be exited. After precharge power-down is exited and
been satisfied, the DLL must be reset via the MRS. Depending on the new clock frequen-
cy, additional MRS commands may need to be issued. During the DLL lock time,
R
ready to operate with a new clock frequency.
CKSRE has been satisfied, the state of the clock becomes a “Don’t Care.” When the
TT,nom
TT,nom
and R
and R
TT(WR)
TT(WR)
TT,nom
are in an off state prior to entering precharge power-down mode,
must remain in an off state. After the DLL lock time, the DRAM is
and R
TT(WR)
123
must be disabled via MR1 and MR2. This ensures
t
CK [AVG] MIN to
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CKSRX. When entering and exiting self re-
Input Clock Frequency Change
2Gb: x4, x8, x16 DDR3 SDRAM
t
CKSRE must occur after CKE goes
t
CK [AVG] MAX). During the input
© 2006 Micron Technology, Inc. All rights reserved.
t
CKSRX before pre-
t
XP has

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