MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 151

• Manufacturer Part Number: MT41J256M8HX-15E:D
• Description: MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-15E:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Compliant

MPR Read Predefined Pattern
MODE REGISTER SET (MRS) Command
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
The predetermined read calibration pattern is a fixed pattern of 0, 1, 0, 1, 0, 1, 0, 1. The
following is an example of using the read out predetermined read calibration pattern.
The example is to perform multiple reads from the multipurpose register to do system
level read timing calibration based on the predetermined and standardized pattern.
The following protocol outlines the steps used to perform the read calibration:
The mode registers are loaded via inputs BA[2:0], A[13:0]. BA[2:0] determine which
mode register is programmed:
• BA2 = 0, BA1 = 0, BA0 = 0 for MR0
• BA2 = 0, BA1 = 0, BA0 = 1 for MR1
• BA2 = 0, BA1 = 1, BA0 = 0 for MR2
• BA2 = 0, BA1 = 1, BA0 = 1 for MR3
The MRS command can only be issued (or reissued) when all banks are idle and in the
precharged state (
must wait the specified time
ACTIVATE command (see Figure 50 (page 132)). There is also a restriction after issuing
an MRS command with regard to when the updated functions become available. This
parameter is specified by
ure 50 (page 132) and Figure 51 (page 133). Violating either of these requirements will
result in unspecified operation.
1. Precharge all banks
2. After
3. Data WRITE operations are not allowed until the MPR returns to the normal
4. Issue a read with burst order information (all other address pins are “Don’t Care”):
5. After RL = AL + CL, the DRAM bursts out the predefined read calibration pattern
6. The memory controller repeats the calibration reads until read data capture at
7. After the last MPR READ burst and after
8. When
sequent reads and loads the predefined pattern into the MPR. As soon as
and
DRAM state
• A[1:0] = 00 (data burst order is fixed starting at nibble)
• A2 = 0 (for BL8, burst order is fixed as 0, 1, 2, 3, 4, 5, 6, 7)
• A12 = 1 (use BL8)
(0, 1, 0, 1, 0, 1, 0, 1)
memory controller is optimized
MR3[2] = 0, and MR3[1:0] = “Don’t Care” to the normal DRAM state. All subse-
quent read and write accesses will be regular reads and writes from/to the DRAM
array
mands (such as activate a memory bank for regular read or write access) are
permitted
t
MOD are satisfied, the MPR is available
t
RP is satisfied, set MRS, MR3[2] = 1 and MR3[1:0] = 00. This redirects all sub-
t
MRD and
t
RP is satisfied and no data bursts are in progress). The controller
t
MOD are satisfied from the last MRS, the regular DRAM com-
t
MOD. Both
t
151
MRD before initiating a subsequent operation such as an
MODE REGISTER SET (MRS) Command
t
MRD and
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
MPRR has been satisfied, issue MRS,
2Gb: x4, x8, x16 DDR3 SDRAM
t
MOD parameters are shown in Fig-
© 2006 Micron Technology, Inc. All rights reserved.
t
MRD