MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 60

• Manufacturer Part Number: MT41J256M8HX-15E:D
• Description: MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-15E:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Compliant

Figure 23: ODT Timing Reference Load
Table 36: ODT Timing Definitions
Table 37: Reference Settings for ODT Timing Measurements
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
Symbol
t
Measured Parameter
t
AONPD
AOFPD
t
t
t
AON
AOF
ADC
t
t
AONPD
AOFPD
t
t
t
AON
AOF
ADC
point of ODTLcnw, ODTLcwn4, or ODTLcwn8
Rising edge of CK - CK# defined by the end
Rising edge of CK - CK# defined by the end
Rising edge of CK - CK# defined by the end
Rising edge of CK - CK# with ODT first
Rising edge of CK - CK# with ODT first
Begin Point Definition
Note:
being registered HIGH
being registered LOW
point of ODTL off
point of ODTL on
CK, CK#
1. Assume an RZQ of 240Ω (±1%) and that proper ZQ calibration has been performed at a
R
stable temperature and voltage (V
TT,nom
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
DUT
TDQS, TDQS#
Setting
DQS, DQS#
ZQ
DQ, DM
V
REF
V
DDQ
RZQ = 240Ω
R
Timing reference point
/2
TT
R
60
= 25Ω
Extrapolated points at V
TT(WR)
RZQ/2 (120Ω)
Extrapolated point at V
Extrapolated point at V
Extrapolated point at V
Extrapolated point at V
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
End Point Definition
Setting
DDQ
V
V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TT
SSQ
= V
= V
V
RTT,nom
DD
SSQ
, V
2Gb: x4, x8, x16 DDR3 SDRAM
SSQ
= V
RTT(WR)
RTT,nom
RTT,nom
100mV
100mV
100mV
100mV
200mV
SS
50mV
50mV
50mV
50mV
V
SSQ
SSQ
).
SW1
and
ODT Characteristics
© 2006 Micron Technology, Inc. All rights reserved.
Figure 24 (page 61)
Figure 24 (page 61)
Figure 25 (page 61)
Figure 25 (page 61)
Figure 26 (page 62)
Figure
100mV
200mV
100mV
200mV
100mV
200mV
100mV
200mV
300mV
V
SW2