MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 9

• Manufacturer Part Number: MT41J256M8HX-15E:D
• Description: MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-15E:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Compliant

Figure 51: MRS to nonMRS Command Timing (
Figure 52: Mode Register 0 (MR0) Definitions ................................................................................................ 134
Figure 53: READ Latency .............................................................................................................................. 136
Figure 54: Mode Register 1 (MR1) Definition ................................................................................................. 137
Figure 55: READ Latency (AL = 5, CL = 6) ....................................................................................................... 140
Figure 56: Mode Register 2 (MR2) Definition ................................................................................................. 141
Figure 57: CAS Write Latency ........................................................................................................................ 142
Figure 58: Mode Register 3 (MR3) Definition ................................................................................................. 144
Figure 59: Multipurpose Register (MPR) Block Diagram ................................................................................. 145
Figure 60: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 147
Figure 61: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout ......................... 148
Figure 62: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble ................................... 149
Figure 63: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble ................................... 150
Figure 64: ZQ Calibration Timing (ZQCL and ZQCS) ...................................................................................... 152
Figure 65: Example: Meeting
Figure 66: Example:
Figure 67: READ Latency .............................................................................................................................. 155
Figure 68: Consecutive READ Bursts (BL8) .................................................................................................... 157
Figure 69: Consecutive READ Bursts (BC4) .................................................................................................... 157
Figure 70: Nonconsecutive READ Bursts ....................................................................................................... 158
Figure 71: READ (BL8) to WRITE (BL8) .......................................................................................................... 158
Figure 72: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 159
Figure 73: READ to PRECHARGE (BL8) ......................................................................................................... 159
Figure 74: READ to PRECHARGE (BC4) ......................................................................................................... 160
Figure 75: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 160
Figure 76: READ with Auto Precharge (AL = 4, CL = 6) .................................................................................... 160
Figure 77: Data Output Timing –
Figure 78: Data Strobe Timing – READs ......................................................................................................... 163
Figure 79: Method for Calculating
Figure 80:
Figure 81:
Figure 82:
Figure 83:
Figure 84: WRITE Burst ................................................................................................................................ 168
Figure 85: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 169
Figure 86: Consecutive WRITE (BC4) to WRITE (BC4) via MRS or OTF ............................................................ 169
Figure 87: Nonconsecutive WRITE to WRITE ................................................................................................. 170
Figure 88: WRITE (BL8) to READ (BL8) .......................................................................................................... 170
Figure 89: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 171
Figure 90: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 172
Figure 91: WRITE (BL8) to PRECHARGE ........................................................................................................ 173
Figure 92: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 173
Figure 93: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 174
Figure 94: Data Input Timing ........................................................................................................................ 175
Figure 95: Self Refresh Entry/Exit Timing ...................................................................................................... 177
Figure 96: Active Power-Down Entry and Exit ................................................................................................ 181
Figure 97: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................ 182
Figure 98: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ............................................................... 182
Figure 99: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................ 183
Figure 100: Power-Down Entry After WRITE .................................................................................................. 183
Figure 101: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 184
Figure 102: REFRESH to Power-Down Entry .................................................................................................. 184
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
t
t
t
t
RPRE Timing ............................................................................................................................... 164
RPST Timing ............................................................................................................................... 165
WPRE Timing .............................................................................................................................. 167
WPST Timing .............................................................................................................................. 167
t
FAW ............................................................................................................................. 154
t
RRD (MIN) and
t
DQSQ and Data Valid Window ................................................................... 162
t
LZ and
t
HZ .............................................................................................. 164
t
RCD (MIN) ............................................................................. 153
t
MOD) .................................................................................. 133
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2Gb: x4, x8, x16 DDR3 SDRAM
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