MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 30

• Manufacturer Part Number: MT41J256M8HX-15E:D
• Description: MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-15E:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Compliant

Input/Output Capacitance
Table 7: Input/Output Capacitance
Note 1 applies to the entire table
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
Capacitance
Parameters
CK and CK#
ΔC: CK to CK#
Single-end I/O: DQ, DM
Differential I/O: DQS,
DQS#, TDQS, TDQS#
ΔC: DQS to DQS#, TDQS,
TDQS#
ΔC: DQ to DQS
Inputs (CTRL, CMD,
ADDR)
ΔC: CTRL to CK
ΔC: CMD_ADDR to CK
ZQ pin capacitance
Reset pin capacitance
Notes:
C
DI_CMD_ADDR
Symbol
C
C
1. V
2. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading.
3. Includes TDQS, TDQS#. Cddqs is for DQS vs. DQS# and TDQS vs. TDQS# separately.
4. C
5. Excludes CK, CK#; CTRL = ODT, CS#, and CKE; CMD = RAS#, CAS#, and WE#; ADDR = A[n:
6. C
7. C
DI_CTRL
C
C
C
C
C
C
DDQS
C
DCK
C
DIO
ZO
CK
RE
IO
IO
I
V
0], BA[2:0].
DIO
DI_CTRL
DI_CMD_ADDR
DD
DDQ
= +1.5V ±0.075mV, V
= C
, V
OUT
IO
= C
Min Max Min Max Min Max Min Max Min Max
0.75
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
–0.5
–0.5
–0.5
0.8
1.5
1.5
0
0
–
–
(DQ) - 0.5 × (C
I
(peak-to-peak) = 0.1V.
(CTRL) - 0.5 × (C
= C
0.15
1.6
3.0
3.0
0.2
0.3
1.4
0.3
0.5
3.0
3.0
I
(CMD_ADDR) - 0.5 × (C
0.75
–0.5
–0.5
–0.5
0.8
1.5
1.5
0
0
–
–
IO
DDQ
30
[DQS] + C
CK
0.15
1.35
1.6
3.0
3.0
0.2
0.3
0.3
0.5
3.0
3.0
= V
[CK] + C
DD
0.75
–0.5
–0.4
–0.4
, V
0.8
1.5
1.5
IO
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0
0
–
–
REF
[DQS#]).
CK
CK
= V
[CK#]).
0.15
0.15
1.4
2.5
2.5
0.3
1.3
0.2
0.4
3.0
3.0
[CK] + C
SS
2Gb: x4, x8, x16 DDR3 SDRAM
, f = 100 MHz, T
0.75
–0.5
–0.4
–0.4
0.8
1.5
1.5
0
0
–
–
CK
[CK#]).
Electrical Specifications
0.15
0.15
1.4
2.3
2.3
0.3
1.3
0.2
0.4
3.0
3.0
© 2006 Micron Technology, Inc. All rights reserved.
0.75
–0.5
–0.4
–0.5
C
0.8
1.4
1.4
0
0
–
–
= 25°C. V
0.15
0.15
1.3
2.2
2.2
0.3
1.3
0.2
0.3
3.0
3.0
OUT(DC)
Units Notes
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
= 0.5 ×
2
3
3
4
5
6
7