MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 61

• Manufacturer Part Number: MT41J256M8HX-15E:D
• Description: MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-15E:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Compliant

Figure 24:
Figure 25:
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
t AONPD
Begin point: Rising edge of CK - CK#
with ODT first registered high
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
t
t AON
t
AON and
AONPD and
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL on
t
AOF Definitions
V
V
SSQ
SSQ
t
AOFPD Definitions
T
t AON
T
SW1
t AONPD
SW1
End point: Extrapolated point at V
T
End point: Extrapolated point at V
SW2
T
SW2
V
CK
CK#
SW1
V
CK
CK#
SW1
t AOFPD
Begin point: Rising edge of CK - CK#
with ODT first registered low
t AOF
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL off
V
V
SW2
SW2
61
V
SW2
V
SW2
SSQ
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SSQ
V
SW1
V
2Gb: x4, x8, x16 DDR3 SDRAM
SW1
t AOF
t AOFPD
End point: Extrapolated point at V
End point: Extrapolated point at V
T
T
SW2
SW1
T
SW1
T
SW1
ODT Characteristics
© 2006 Micron Technology, Inc. All rights reserved.
V
V
RTT,nom
RTT,nom
V
DDQ
V
V
V
DDQ
SSQ
SSQ
/2
/2
RTT,nom
RTT,nom