MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 134

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MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

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Figure 52: Mode Register 0 (MR0) Definitions
Burst Type
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
M16
0
0
1
1
M15
0
1
0
1
Mode register 0 (MR0)
Mode register 1 (MR1)
Mode register 2 (MR2)
Mode register 3 (MR3)
Mode Register
Note:
starting location within the block. The programmed burst length applies to both READ
and WRITE bursts.
Accesses within a given burst may be programmed to either a sequential or an inter-
leaved order. The burst type is selected via MR0[3] (see Figure 52 (page 134)). The
ordering of accesses within a burst is determined by the burst length, the burst type,
and the starting column address. DDR3 only supports 4-bit burst chop and 8-bit burst
access modes. Full interleave address ordering is supported for READs, while WRITEs
are restricted to nibble (BC4) or word (BL8) boundaries.
1. MR0[17, 14, 13, 7] are reserved for future use and must be programmed to 0.
BA2
0 1
17
BA1
16
0
M11
M12
BA0
15
0
0
0
0
1
1
1
1
0
0
1
M10
0 1
DLL off (slow exit)
DLL on (fast exit)
A14
0
0
1
1
0
0
1
1
14
Precharge PD
0 1
M9
13
A13
0
1
0
1
0
1
0
1
PD
12
Write Recovery
A12 A11
Reserved
11
10
12
14
5
6
7
8
WR
10
A10
M8
0
1
9
134
A9
DLL Reset
DLL
8
A8
Yes
No
M6
0
0
0
0
1
1
1
1
0
0
0 1
7
A7 A6 A5 A4 A3
M5
0
0
1
1
0
0
1
1
0
0
CAS# latency BT
6
M4
0
1
0
1
0
1
0
1
0
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
5
M2
0
0
0
0
0
0
0
0
1
1
4
CAS Latency
Reserved
3
10
11
12
13
5
6
7
8
9
2Gb: x4, x8, x16 DDR3 SDRAM
2
A2 A1 A0
1
0
M3
0
1
M1
0
0
1
1
Mode Register 0 (MR0)
Address bus
Mode register 0 (MR0)
Sequential (nibble)
M0
READ Burst Type
0
1
0
1
Interleaved
© 2006 Micron Technology, Inc. All rights reserved.
4 or 8 (on-the-fly via A12)
Fixed BC4 (chop)
Burst Length
Fixed BL8
Reserved

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