MT41J256M8DA-125:H Micron Technology Inc, MT41J256M8DA-125:H Datasheet - Page 21

• Manufacturer Part Number: MT41J256M8DA-125:H
• Manufacturer: Micron Technology Inc

Specifications of MT41J256M8DA-125:H

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 4: 82-Ball FBGA (x4, x8)
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
A5, A6, A7, A8, A9,
A0, A1, A2, A3 A4,
A10/AP, A11, A12/
RAS#, CAS#, WE#
BC#, A13, A14
Symbol
CK, CK#
BA[2:0]
RESET#
ODT
CKE
CS#
DM
Type
Input
Input
Input
Input
Input
Input
Input
Input
Input
Description
Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE command. Address inputs are
referenced to V
pled during READ and WRITE commands to determine whether burst chop (on-the-
fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 69
(page 112).
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command.
BA[2:0] are referenced to V
Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of
CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-
pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE
LOW provides PRECHARGE power-down and SELF REFRESH operations (all banks
idle), or active power-down (row active in any bank). CKE is synchronous for power-
down entry and exit and for self refresh entry. CKE is asynchronous for self refresh
exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during
power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF
REFRESH. CKE is referenced to V
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to V
Input data mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with the input data during a write access.
Although the DM ball is input-only, the DM loading is designed to match that of the
DQ and DQS balls. DM is referenced to V
the x8.
On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#,
and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is
ignored if disabled via the LOAD MODE command. ODT is referenced to V
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to V
Reset: RESET# is an active LOW CMOS input referenced to V
ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V
DC LOW ≤ 0.2 × V
REFCA
DDQ
. A12/BC#: When enabled in the mode register (MR), A12 is sam-
. RESET# assertion and desertion are asynchronous.
21
REFCA
.
REFCA
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Ball Assignments and Descriptions
.
REFCA
REFDQ
2Gb: x4, x8, x16 DDR3 SDRAM
.
. DM has an optional use as TDQS on
REFCA
.
© 2006 Micron Technology, Inc. All rights reserved.
SS
. The RESET# input re-
REFCA
DD
and
.