MT41J256M8DA-125:H Micron Technology Inc, MT41J256M8DA-125:H Datasheet - Page 31

• Manufacturer Part Number: MT41J256M8DA-125:H
• Manufacturer: Micron Technology Inc

Specifications of MT41J256M8DA-125:H

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Thermal Characteristics
Figure 13: Thermal Measurement Point
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
Notes:
Table 8: Thermal Characteristics
Parameter/Condition
Operating case temperature
Junction-to-case (TOP)
L
1. MAX operating case temperature. T
2. A thermal solution must be designed to ensure the DRAM device does not exceed the
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
4. If T
5. The thermal resistance data is based off of a number of samples from multiple lots and
maximum T
ing operation.
3.9µs interval refresh rate. The use of SRT or ASR (if available) must be enabled.
should be viewed as a typical number.
(L/2)
C
exceeds +85°C, the DRAM must be refreshed externally at 2X refresh, which is a
C
during operation.
W
31
78-ball “HX”
78-ball “DA”
82-ball “JE”
96-ball “HA”
(W/2)
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package.
T c test point
2Gb: x4, x8, x16 DDR3 SDRAM
0 to +85
0 to +95
Value
tbd
3.9
1.6
3.9
Thermal Characteristics
Units
°C/W
°C
C
© 2006 Micron Technology, Inc. All rights reserved.
Symbol
ΘJC
T
T
C
C
1, 2, 3, 4
Notes
1, 2, 3
5
C
dur-