MT41J256M8DA-125:H Micron Technology Inc, MT41J256M8DA-125:H Datasheet - Page 58

• Manufacturer Part Number: MT41J256M8DA-125:H
• Manufacturer: Micron Technology Inc

Specifications of MT41J256M8DA-125:H

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 33: R
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
[9, 6, 2]
0, 1, 0
0, 0, 1
0, 1, 1
1, 0, 1
MR1
TT
Effective Impedances
120Ω
60Ω
40Ω
30Ω
R
TT
120Ω
60Ω
40Ω
30Ω
• R
• R
• R
R
R
R
R
R
R
R
R
Resistor
TT120(PD240)
TT120(PU240)
TT
TT
TT
TT60(PD120)
TT60(PU120)
TT40(PD80)
TT40(PU80)
TT30(PD60)
TT30(PU60)
40Ω is made up of R
30Ω is made up of R
20Ω is made up of R
V
V
V
V
IL(AC)
IL(AC)
IL(AC)
IL(AC)
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
V
to V
to V
to V
to V
OUT
TT40(PD80)
TT30(PD60)
TT20(PD40)
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
IH(AC)
IH(AC)
IH(AC)
IH(AC)
58
and R
and R
and R
Min
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
TT40(PU80)
TT30(PU60)
TT20(PU40)
2Gb: x4, x8, x16 DDR3 SDRAM
Nom
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
ODT Characteristics
© 2006 Micron Technology, Inc. All rights reserved.
Max
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/4
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/6
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/8
Units