MT48H32M16LFBF-75 IT:B Micron Technology Inc, MT48H32M16LFBF-75 IT:B Datasheet - Page 17

• Manufacturer Part Number: MT48H32M16LFBF-75 IT:B
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H32M16LFBF-75 IT:B

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications – I
Table 7: I
Note 1 applies to all parameters and conditions; V
Table 8: I
Note 1 applies to all parameters and conditions; V
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE;
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Non-power-down mode; All banks idle; CKE = HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks ac-
tive; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after
Operating current: Burst mode; READ or WRITE; All banks active, half
of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE;
t
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Non-power-down mode; All banks idle; CKE =
HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks
active; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks
active after
Operating current: Burst mode; READ or WRITE; All banks active,
half DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
RC (MIN)
t
RCD met; No accesses in progress
DD
DD
t
RCD met; No accesses in progress
Specifications and Conditions (x16)
Specifications and Conditions (x32)
DD
t
t
RFC = 110ns
RFC = 7.8125μs
t
t
RFC = 110ns
RFC = 7.8125μs
DD
DD
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Parameters
/V
/V
DDQ
DDQ
= 1.70–1.95V
= 1.70–1.95V
t
t
17
RC =
RC =
Electrical Specifications – I
t
RC
Symbol
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I
I
I
I
I
I
I
I
DD2N
DD3N
Symbol
DD2P
DD3P
DD1
DD4
DD5
DD6
I
ZZ
I
I
I
I
I
DD2N
DD3N
I
I
I
DD2P
DD3P
DD1
DD4
DD5
DD6
I
ZZ
300
105
100
90
10
20
10
-6
5
3
300
100
100
90
10
20
10
-6
5
3
Max
Max
300
100
© 2007 Micron Technology, Inc. All rights reserved.
-75
80
18
95
10
8
5
3
300
100
-75
80
18
90
10
8
5
3
DD
Units
mA
mA
mA
mA
mA
mA
mA
Units
μA
μA
Parameters
mA
mA
mA
mA
mA
mA
mA
μA
μA
2, 3, 4, 6
2, 3, 4, 7
2, 3, 4, 6
2, 3, 4, 7
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
5, 8
5, 8
5
5