MT48H32M16LFBF-75 IT:B Micron Technology Inc, MT48H32M16LFBF-75 IT:B Datasheet - Page 65

• Manufacturer Part Number: MT48H32M16LFBF-75 IT:B
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H32M16LFBF-75 IT:B

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Figure 35: READ With Auto Precharge Interrupted by a READ
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Internal
states
Command
Note:
Address
Bank m
Bank n
CLK
DQ
WRITE with auto precharge interrupted by a WRITE (with or without auto precharge)
A WRITE to bank m will interrupt a WRITE on bank n when registered. The precharge to
bank n will begin after
registered. The last valid data WRITE to bank n will be data registered one clock prior to
a WRITE to bank m (see Figure 42 (page 71)).
1. DQM is LOW.
Page active
NOP
T0
READ - AP
Page active
Bank n,
Bank n
T1
Col a
READ with burst of 4
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t
WR is met, where
T2
CL = 3 (bank n)
NOP
65
READ - AP
Bank m,
T3
Bank m
Col d
Interrupt burst, precharge
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
T4
WR begins when the WRITE to bank m is
CL = 3 (bank m)
NOP
t
RP - bank n
D
OUT
T5
NOP
D
OUT
PRECHARGE Operation
T6
NOP
D
© 2007 Micron Technology, Inc. All rights reserved.
OUT
Idle
T7
Don’t Care
NOP
t RP - bank m
D
Precharge
OUT