MT48H32M16LFBF-75 IT:B Micron Technology Inc, MT48H32M16LFBF-75 IT:B Datasheet - Page 37

MT48H32M16LFBF-75 IT:B

Manufacturer Part Number
MT48H32M16LFBF-75 IT:B
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H32M16LFBF-75 IT:B

Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
Table 18: Truth Table – CKE
Notes 1–4 apply to all parameters and conditions
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Current State
Power-down
Self refresh
Clock suspend
Deep power-down
Power-down
Deep power-down
Self refresh
Clock suspend
All banks idle
All banks idle
All banks idle
Reading or writing
Notes:
CKE
H
H
L
L
n-1
1. CKE
2. Current state is the state of the SDRAM immediately prior to clock edge n.
3. COMMAND
4. All states and sequences not shown are illegal or reserved.
5. Exiting power-down at clock edge n will put the device in the all banks idle state in time
6. Exiting self refresh at clock edge n will put the device in the all banks idle state after
7. After exiting clock suspend at clock edge n, the device will resume operation and recog-
8. Deep power-down is a power-saving feature of this device. This command is BURST TER-
ous clock edge.
MAND
for clock edge n + 1 (provided that
t
occurring during the
during the
nize the next command at clock edge n + 1.
MINATE when CKE is HIGH and DEEP POWER-DOWN when CKE is LOW.
XSR is met. COMMAND INHIBIT or NOP commands should be issued on any clock edges
CKE
H
H
L
L
n
n
is the logic state of CKE at clock edge n; CKE
n
.
t
n
XSR period.
is the command registered at clock edge n, and ACTION
COMMAND INHIBIT or NOP
COMMAND INHIBIT or NOP
COMMAND INHIBIT or NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
BURST TERMINATE
Table 17 (page 35)
t
XSR period. A minimum of two NOP commands must be provided
AUTO REFRESH
Command
37
VALID
X
X
X
X
X
X
n
t
CKS is met).
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n-1
Maintain deep power-down
Deep power-down entry
Maintain clock suspend
was the state of CKE at the previ-
Exit deep power-down
Maintain power-down
Maintain self refresh
Clock suspend entry
Power-down entry
Exit clock suspend
Exit power-down
Self refresh entry
Exit self refresh
Action
© 2007 Micron Technology, Inc. All rights reserved.
n
n
is a result of COM-
Truth Tables
Notes
5
6
7
8

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