MT48H32M16LFBF-75 IT:B Micron Technology Inc, MT48H32M16LFBF-75 IT:B Datasheet - Page 32

• Manufacturer Part Number: MT48H32M16LFBF-75 IT:B
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H32M16LFBF-75 IT:B

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

SELF REFRESH
DEEP POWER-DOWN
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
The SELF REFRESH command is used to place the device in self refresh mode. The self
refresh mode is used to retain data in the SDRAM while the rest of the system is pow-
ered down. When in self refresh mode, the device retains data without external clock-
ing. The SELF REFRESH command is initiated like an AUTO REFRESH command,
except that CKE is disabled (LOW). After the SELF REFRESH command is registered, the
inputs become “Don’t Care,” with the exception of CKE, which must remain LOW.
The DEEP POWER-DOWN (DPD) command is used to enter deep power-down mode,
achieving maximum power reduction by eliminating the power to the memory array.
To enter DPD, all banks must be idle. While CKE is LOW, hold CS# and WE# LOW, and
hold RAS# and CAS# HIGH at the rising edge of the clock. To exit DPD, assert CKE HIGH.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
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