NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 17

no-image

NAND512R3A2CZA6E

Manufacturer Part Number
NAND512R3A2CZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND512R3A2CZA6E

Cell Type
NAND
Density
512Mb
Access Time (max)
15us
Interface Type
Parallel
Address Bus
26b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
64M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND512R3A2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
NAND512-A2C
4
4.1
4.2
4.3
4.4
Bus operations
There are six standard bus operations that control the memory. Each of these is described
in this section, see
Command input
Command Input bus operations are used to give commands to the memory. Command are
accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable
is Low and Read Enable is High. They are latched on the rising edge of the Write Enable
signal.
Only I/O0 to I/O7 are used to input commands.
See
Address input
Address input bus operations are used to input the memory address. Three bus cycles are
required to input the addresses for the 128-Mbit and 256-Mbit devices and four bus cycles
are required to input the addresses for the 512-Mbit and 1-Gbit devices (refer to
Table
The addresses are accepted when Chip Enable is Low, Address Latch Enable is High,
Command Latch Enable is Low and Read Enable is High. They are latched on the rising
edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses.
See
Data input
Data Input bus operations are used to input the data to be programmed.
Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command
Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the
Write Enable signal. The data is input sequentially using the Write Enable signal.
See
Data output
Data Output bus operations are used to read: the data in the memory array, the status
register, the electronic signature and the serial number.
Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low,
and Command Latch Enable is Low.
The data is output sequentially using the Read Enable signal.
See
Figure 20
Figure 21
Figure
Figure 23
7, Address Insertion).
22,
and
and
and
Table
Table 5: Bus
Table 20
Table 20
Table 21
20, and
for details of the timings requirements.
for details of the timings requirements.
for details of the timings requirements.
Table 21
operations, for a summary.
for details of the timings requirements.
Bus operations
Table 6
17/55
and

Related parts for NAND512R3A2CZA6E