NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 40

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
Figure 22. Data Input Latch AC waveforms
Figure 23. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
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CL
AL
I/O
W
E
(ALSetup time)
tALLWH
tWLWH
(Data Setup time)
tDVWH
tWLWL
Data In 0
(Data Hold time)
tDVWH
tWHDX
tWLWH
Data In 1
tDVWH
tWHDX
Data In
Last
tEHQX
tWLWH
tWHDX
(E Hold time)
tWHEH
(CL Hold time)
tWHCLH
tEHQZ
NAND512-A2C
ai08031b
ai13107