NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 22

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NAND512R3A2CZA6E

Manufacturer Part Number
NAND512R3A2CZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND512R3A2CZA6E

Cell Type
NAND
Density
512Mb
Access Time (max)
15us
Interface Type
Parallel
Address Bus
26b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
64M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND512R3A2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Device operations
Figure 8.
6.2
6.2.1
22/55
I/O
I/O
I/O
Areas B, C can be programmed depending on how much data is input. The 01h command must be re-issued before each program.
Areas A, B, C can be programmed depending on how much data is input. Subsequent 00h commands can be omitted.
00h
01h
50h
Pointer operations for programming
Read memory array
Each operation to read the memory area starts with a pointer operation as shown in the
Section 6.1: Pointer
Read A, Read B or Read C commands four bus cycles (for 512-Mbit and 1-Gbit devices) or
three bus cycles (for 128-Mbit and 256-Mbit devices) are required to input the address (refer
to
The device defaults to read A mode after power-up or a reset operation.
When reading the spare area addresses:
are used to set the start address of the spare area while addresses:
are ignored.
Once the Read A or Read C commands have been issued they do not need to be reissued
for subsequent read operations as the pointer remains in the respective area. However, the
Read B command is effective for only one operation, once an operation has been executed
in area B the pointer returns automatically to area A and so another Read B command is
required to start another read operation in area B.
Once a Read command is issued two types of operations are available: random read and
page read.
Random read
Each time the command is issued the first read is random read.
Table 6
80h
80h
80h
A0 to A3 (x8 devices)
A0 to A2 (x16 devices)
A4 to A7 (x8 devices)
A3 to A7 (x16 devices)
Only Areas C can be programmed. Subsequent 50h commands can be omitted.
and
Address
Address
Address
Inputs
Inputs
Inputs
Table
operations. Once the area (main or spare) has been selected using the
7) of the data to be read.
Data Input
Data Input
Data Input
10h
10h
10h
AREA C
AREA A
AREA B
00h
01h
50h
80h
80h
80h
Address
Address
Address
Inputs
Inputs
Inputs
Data Input
Data Input
Data Input
NAND512-A2C
10h
10h
10h
ai07591

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