NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 51

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND512-A2C
Table 23.
Symbol
FD1
FE1
ddd
FD
SD
SE
A1
A2
D1
D2
E1
E2
FE
D
A
E
b
e
VFBGA55 8 x 10 x 1.05 mm - 6 x 8 +7 active ball array, 0.8 mm pitch, mechanical data
10.00
0.65
0.45
8.00
4.00
5.60
5.60
8.80
2.00
1.20
2.20
0.60
Typ
millimeters
0.25
0.40
7.90
9.90
Min
0.80
0.40
0.40
10.10
Max
1.05
0.50
8.10
0.10
0.026
0.018
0.315
0.157
0.220
0.394
0.220
0.346
0.079
0.047
0.087
0.024
Typ
0.010
0.016
0.311
0.390
Min
inches
0.031
0.016
0.016
Package mechanical
0.041
0.020
0.319
0.004
0.398
Max
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