NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 7

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND512-A2C
Table 2.
Figure 1.
NAND512-A2C
Reference
NAND512W3A2C
NAND512R3A2C
NAND512R4A2C
Product description
Logic diagram
Part number
Density
Mbits
512
width
Bus
x16
x8
WP
CL
AL
W
R
E
512+16
256+8
words
Page
bytes
size
16K+512
8K+256
NAND flash
Block
words
bytes
size
V DD
V SS
4096 blocks
32 pages x
Memory
array
8
1.7 to 1.95 V
1.7 to 1.95 V
2.7 to 3.6 V
Operating
voltage
RB
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
Random
access
15 µs
12 µs
15 µs
AI07557C
Max
Sequential
access
50 ns
30 ns
50 ns
Min
Timings
program
200 µs
Page
Typ
Block
erase
2 ms
Typ
Description
VFBGA55
VFBGA63
Package
TSOP48
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