NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 29

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND512-A2C
6.8
Read electronic signature
The device contains a manufacturer code and device code. To read these codes two steps
are required:
1.
2.
Refer to
Table 12.
first use one bus write cycle to issue the Read Electronic Signature command (90h),
followed by an address input of 00h
then perform two bus read operations – the first reads the manufacturer code and the
second, the device code. Further bus read operations are ignored.
Table 12: Electronic
NAND512W3A2C
NAND512R3A2C
NAND512R4A2C
Part number
Electronic signature
signature, for information on the addresses.
Manufacturer code
0020h
20h
Device code
Device operations
0046h
36h
76h
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