NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 54

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NAND512R3A2CZA6E

Manufacturer Part Number
NAND512R3A2CZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND512R3A2CZA6E

Cell Type
NAND
Density
512Mb
Access Time (max)
15us
Interface Type
Parallel
Address Bus
26b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
64M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND512R3A2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Revision history
13
54/55
Revision history
Table 26.
14-May-2008
24-Sep-2008
08-Feb-2007
19-Mar-2008
26-Oct-2006
09-Jun-2009
Date
Document revision history
Revision
0.1
1
2
3
4
5
Initial release.
Datasheet status upgraded to ‘full datasheet’.
USOP48 package removed.
Data integrity of 100,000 specified for ECC implemented.
t
Added: t
operations, note 2 below the same table,
enable waveforms
Modified:
failure in
V
Read status register AC
Minor text changes.
Applied Numonyx branding.
Added the sequential row read option and the package VFBGA55
throughout the document.
Document status upgraded from ‘full datasheet’ to ‘not for new
design’. Added security features on the cover page and in
Description. Updated
Figure 35: Resistor value versus waveform timings for Ready/Busy
signal. References to ECOPACK removed and replaced by RoHS
compliance. Modified dimension A2 of the VFBGA55 and VFBGA63
packages in
part number throughout the document.
WHBH1
LKO
in
removed from
Table 19: DC characteristics, 3 V devices
vHWH
Table 13: NAND flash failure
Section 3.9: Ready/Busy
Table 23
and t
and
VLWH
and
Figure 33: Ready/Busy AC waveform
Table 21: AC characteristics for
Figure 32: Program/erase disable
waveforms.
in
Table
Table 21: AC characteristics for
Changes
24. Removed NAND512W4A2C root
(RB), procedure for program
modes, maximum value for
Figure 31: Program/erase
and
NAND512-A2C
operations.
Figure 24:
waveforms.
Section 1:
and

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