NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 45

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND512-A2C
Figure 29. Block erase AC waveforms
Figure 30. Reset AC waveforms
RB
I/O
W
AL
CL
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
tWHBL
cycle 3
Add.
(Reset Busy time)
tBLBH4
Confirm
Code
D0h
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
DC and AC parameters
SR0
ai08043
ai08038b
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