NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 44

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
Figure 28. Page program AC waveforms
44/55
RB
CL
I/O
AL
W
R
E
Page Program
Setup Code
80h
(Write Cycle time)
tWLWL
cycle 1
Add.N
cycle 2
Add.N
Address Input
cycle 3
Add.N
cycle 4
Add.N
tWLWL
N
Data Input
tWHBL
(Program Busy time)
Last
tWLWL
Confirm
tBLBH2
Code
10h
Program
Page
Read Status Register
70h
NAND512-A2C
SR0
ai08037