NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 48

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
Figure 35. Resistor value versus waveform timings for Ready/Busy signal
1. T = 25°C.
10.2
Figure 36. Data protection
48/55
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A V
In the V
Low (V
below
V DD
DD
WP
(Figure
detection circuit disables all NAND operations, if V
IL
DD
) to guarantee hardware protection during power transitions as shown in the figure
Nominal Range
range from V
36).
V LKO
Locked
LKO
to the lower limit of nominal range, the WP pin should be kept
Locked
DD
is below the V
Ai13188
LKO
NAND512-A2C
threshold.