NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 31

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND512-A2C
Table 13.
Figure 16. Bad block management flowchart
Operation
Program
NAND flash failure modes
Erase
Read
Block Address =
START
Block 0
= FFh?
block?
Data
Last
END
YES
YES
NO
NO
Bad Block table
Update
Block Address
Increment
Block Replacement
Block Replacement
Procedure
ECC
AI07588C
Software algorithms
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