NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 52

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

Package mechanical
Figure 39. VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.8 mm pitch, package outline
1. Drawing is not to scale.
Table 24.
52/55
Symbol
FD1
FE1
ddd
FD
SD
SE
A1
A2
D1
D2
E1
E2
FE
D
A
E
b
e
VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15 active ball array, 0.8 mm pitch, mechanical data
E
11.00
E2
0.65
0.45
9.00
4.00
7.20
5.60
8.80
2.50
0.90
2.70
1.10
Typ
BALL "A1"
FD1
E1
A
millimeters
10.90
e
0.25
0.40
8.90
Min
0.80
0.40
0.40
SD
D2
D1
D
FD
11.10
Max
1.05
0.50
9.10
0.10
A1
e
SE
b
FE1
A2
FE
0.026
0.018
0.354
0.157
0.283
0.433
0.220
0.346
0.098
0.035
0.106
0.043
Typ
BGA-Z75
0.010
0.016
0.350
0.429
Min
inches
0.031
0.016
0.016
ddd
NAND512-A2C
0.041
0.020
0.358
0.004
0.437
Max