NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 20

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

Command set
5
20/55
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in
Table 9.
1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or
2. Any undefined command sequence is ignored by the device.
3. The Read B command (code 01h) is not used in x16 devices.
4. The Program Confirm command (code 10h) is no more necessary for NAND512-A2C devices. It is optional
Read A
Read B
Read C
Read Electronic Signature
Read Status Register
Page Program
Copy Back Program
Block Erase
Reset
input/output data are not shown.
and has been maintained for backward compatibility.
(3)
Command
Commands
1
Table
st
FFh
00h
01h
50h
90h
70h
80h
00h
60h
cycle
Bus write operations
9.
2
nd
D0h
8Ah
10h
cycle
–
–
–
–
–
–
(1)(2)
3
(10h)
rd
cycle
–
–
–
–
–
–
–
–
(4)
accepted during
NAND512-A2C
Command
busy
Yes
Yes