NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet - Page 23

• Manufacturer Part Number: NAND512R3A2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2CZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND512-A2C
6.2.2
Figure 9.
6.2.3
RB
I/O
CL
AL
W
R
E
Page read
After the random read access the page data is transferred to the page buffer in a time of
t
goes High. The data can then be read out sequentially (from selected column address to
last column address) by pulsing the Read Enable signal.
Read (A,B,C) operations
Sequential row read
After the data in last column of the page is output, if the Read Enable signal is pulsed and
Chip Enable remains Low, then the next page is automatically loaded into the page buffer
and the read operation continues. A sequential row read operation can only be used to read
within a block. If the block changes a new read command must be issued. Refer to
Figure 10: Sequential row read operations
diagrams
read operation, set to High the Chip Enable signal for more than t
is not available when the Chip Enable don’t care option is enabled.
WHBH
Command
01h/ 50h
code
00h/
(refer to
for details about sequential row read operations. To terminate a sequential row
Table 21
Address input
for value). Once the transfer is complete the Ready/Busy signal
tBLBH1
(read)
Busy
and
Figure 11: Sequential row read block
Data output (sequentially)
EHEL
. Sequential row read
Device operations
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