ST52T430K3M6 STMicroelectronics, ST52T430K3M6 Datasheet - Page 20

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ST52T430K3M6

Manufacturer Part Number
ST52T430K3M6
Description
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST52T430K3M6

Cpu Family
ST52
Device Core Size
8b
Frequency (max)
20MHz
Interface Type
SCI/UART
Program Memory Type
EPROM
Program Memory Size
8KB
Total Internal Ram Size
256Byte
# I/os (max)
23
Number Of Timers - General Purpose
3
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (max)
5.5/5.8V
Operating Supply Voltage (min)
2.7/3V
On-chip Adc
8-chx8-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
34
Package Type
SSO
Lead Free Status / Rohs Status
Not Compliant

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3 EPROM
EPROM memory provides an on-chip user-
programmable non-volatile memory, which allows
fast and reliable storage of user data.
EPROM memory can be locked by the user. In
fact, a memory location called Lock Cell is devoted
to lock EPROM and avoid external operations. A
software identification code, called ID CODE,
distinguishes which software version is stored in
the memory.
64 kbits of memory space with an 8-bit internal
parallelism (up to 8 kbytes) addressed by an 13-bit
bus are available. The data bus is 8 bits.
Memory has a double supply: V
12V 5% in Programming Phase or to V
Working Phase. V
ST52x430 EPROM memory is divided into three
main blocks (see Figure ):
I
I
Figure 3.1 Program Memory Organization
ST52T430/E430
20/85
Interrupt Vectors memory block (3 through 20)
contains the addresses for the interrupt routines.
Each address is composed of three bytes.
Mbfs Setting memory block (21 through
MemAdd) contains the coordinates of the
vertexes of every Mbf defined in the program.
ST52430K3
DD
is equal to 5V 10%.
ST52430K2
ST52430K1
PP
MemAdd+1
MemAdd
is equal to
SS
8191
4095
2047
during
21
20
3
2
0
Program Instruction
Fuzzy and Boolean
INT_TIMER/PWM2
INT_TIMER/PWM1
INT_TIMER/PWM0
Mbfs Parameters
I
I
Table 3.1 Mem Addx
Locations 0, 1 and 2 contain the address of the first
microcode instruction.The operations that can be
performed on EPROM during the Programming
Phase are: Stand By, Memory Writing, Reading
and Verify/Margin Mode, Memory Lock, IDCode
Writing and Verify.
First Address
Algorithms
area is dynamically assigned according to the
size of the fuzzy routines. The unused memory
area, if any, is assigned to the Program
Instruction Set memory block.
The Program Instructions Set memory block
(MemAdd through MemAddx) contains the
instruction set of the user program. The
following table summarizes the values of Mem
Addx for the different devices
INT_ADC
The maximum value of MemAdd is 1023. This
INT_EXT
Mem
Addx
INT_SCI
ST52T430K2
4095
Program
Instruction
Set
Interrupt
Vectors
Mbfs Setting
and Program
Instruction Set
ST52T430K3
8191

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