MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 11

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 5:
Figure 6:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
(4Gb: 3FFC0000h)
(4Gb: 1FFE0000h)
(4Gb: 3FFFF83Fh)
(4Gb: 1FFFFC1Fh)
Memory Map x8
Memory Map x16
00080000h
00040000h
0040000h
0020000h
1FFC0000h
0007F83Fh
0003F83Fh
005F41Fh
003F41Fh
001F41Fh
000BF83Fh
FFE0000h
1FFFF83Fh
FFFF41Fh
Note:
0
0
A27 (4Gb: A28)
A28 (4Gb: A29)
Block address and page address = actual page address.
Block Address
Block Address
A1 7
A18
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
A1 6
11
A1 7
Page Address within a block
Page Address within a block
page 63-0
page 63-0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
A1 1
A1 2
A1 0
A1 0
A1 1
A1 1
Column Address within a page
©2004 Micron Technology, Inc. All rights reserved.
Spare Address within a page
Spare Address within a page
Column Address
Addressing
A4
A5
A0
A0
A0
A0