MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 22

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Command Definitions
Table 7:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Operation
PAGE READ
PAGE READ CACHE MODE START
PAGE READ CACHE MODE START LAST
READ for INTERNAL DATA MOVE
RANDOM DATA READ
READ ID
READ STATUS
PROGRAM PAGE
PROGRAM PAGE CACHE
PROGRAM for INTERNAL DATA MOVE
RANDOM DATA INPUT for PROGRAM
BLOCK ERASE
RESET
Command Set
Notes: 1. Do not cross die address boundaries when using cache operations. See Tables 4 and 5 for
3
1
2. Do not cross die address boundaries when using READ for INTERNAL DATA MOVE and
3. RANDOM DATA READ command limited to use within a single page.
4. RANDOM DATA INPUT for PROGRAM command limited to use within a single page.
definition of die address boundaries.
PROGRAM FOR INTERNAL DATA MOVE. See Tables 4 and 5 for definition of die address
boundaries.
1
2
2
4
1
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Cycle 1
22
00h
31h
3Fh
00h
05h
90h
70h
80h
80h
85h
85h
60h
FFh
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Cycle 2
D0h
30h
35h
E0h
10h
15h
10h
–
–
–
–
–
–
Command Definitions
©2004 Micron Technology, Inc. All rights reserved.
Valid During Busy
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Yes
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